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| BSC100N10NSF G OptiMOSTM2 Power-Transistor Features * Very low gate charge for high frequency applications * Optimized for dc-dc conversion * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 150 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 100 10 90 PG-TDSON-8 V m A Type BSC100N10NSF G Package PG-TDSON-8 Marking 100N10NS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C T A=25 C, R thJA=50 K/W 2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=50 A, R GS=25 Value 90 57 11.4 360 377 20 156 -55 ... 150 55/150/56 mJ V W C Unit A Rev. 2.08 page 1 2009-11-03 BSC100N10NSF G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case R thJC bottom top Thermal resistance, junction - ambient R thJA minimal footprint 6 cm2 cooling area2) 0.8 18 62 50 K/W Values typ. max. Unit Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=110 A V DS=100 V, V GS=0 V, T j=25 C V DS=100 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A V GS=20 V, V DS=0 V V GS=10 V, I D=25 A 100 2 3 0.01 4 1 A V 31 10 1 7.7 1.3 61 100 100 10 nA m S 1) 2) J-STD20 and JESD22 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) see figure 3 Rev. 2.08 page 2 2009-11-03 BSC100N10NSF G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=25 A, R G=1.6 V GS=0 V, V DS=50 V, f =1 MHz - 2200 730 22 18 23 26 7 2900 970 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=25 A, V GS=0 to 10 V - 11 8 13 33 5.1 74 44 99 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=50 A, T j=25 C V R=50 V, I F=25 A, di F/dt =100 A/s - 0.9 88 205 90 360 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.08 page 3 2009-11-03 BSC100N10NSF G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 160 100 90 80 140 120 70 100 60 P tot [W] 80 I D [A] 0 40 80 120 160 50 40 30 60 40 20 20 10 0 0 40 80 120 160 0 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 100 ns 1 s 10 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 0.5 102 100 s 0.2 1 ms Z thJC [K/W] I D [A] 0.1 10 1 DC 10 -1 0.05 0.02 0.01 100 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.08 page 4 2009-11-03 BSC100N10NSF G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 80 7V 10 V 6V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 30 25 60 20 5V 5.5 V I D [A] 5.5 V R DS(on) [m] 40 15 6V 7V 10 20 5V 10 V 5 4.5 V 0 0 1 2 3 4 5 0 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 120 8 Typ. forward transconductance g fs=f(I D); T j=25 C 100 80 80 60 g fs [S] 40 40 20 150 C 25 C I D [A] 0 0 2 4 6 8 0 0 20 40 60 80 100 V GS [V] I D [A] Rev. 2.08 page 5 2009-11-03 BSC100N10NSF G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=25 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 3.5 1100 A 3 110 A R DS(on) [m] 2.5 10 typ V GS(th) [V] 100 140 180 98 % 2 1.5 1 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 1000 Ciss 103 Coss 25 C 100 150 C 150 C, 98% C [pF] 102 Crss I F [A] 10 25 C, 98% 101 100 0 20 40 60 80 1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 2.08 page 6 2009-11-03 BSC100N10NSF G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=25 A pulsed parameter: V DD 10 80 V 8 25 C 100 C 50 V 6 20 V 10 125 C V GS [V] 4 2 0 100 1000 0 I AS [A] 1 1 10 5 10 15 20 25 30 35 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 110 V GS Qg 105 V BR(DSS) [V] 100 V g s(th) 95 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 90 T j [C] Rev. 2.08 page 7 2009-11-03 BSC100N10NSF G Package Outline: PG-TDSON-8 Rev. 2.08 page 8 2009-11-03 BSC100N10NSF G Dimensions in mm Rev. 2.08 page 9 2009-11-03 BSC100N10NSF G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.08 page 10 2009-11-03 |
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